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MMG3012NT1 1 rf device data freescale semiconductor MMG3012NT1 0 - 6000 mhz, 19 db 18.5 dbm ingap hbt heterojunction bipolar transistor technology (ingap hbt) broadband high linearity amplifier the MMG3012NT1 is a general purpose amplifier that is internally input matched and internally output matched. it is designed for a broad range of class a, small-signal, high linearity, general purpose applica- tions. it is suitable for applications with frequencies from 0 to 6000 mhz such as cellular, pcs, bwa, wll, phs, catv, vhf, uhf, umts and general small -signal rf. features ? frequency: 0 - 6000 mhz ? p1db: 18.5 dbm @ 900 mhz ? small-signal gain: 19 db @ 900 mhz ? third order output intercept point: 34 dbm @ 900 mhz ? single 5 volt supply ? internally matched to 50 ohms ? low cost sot -89 surface mount package ? pb -free and rohs compliant ? in tape and reel. t1 suffix = 1000 units per 12 mm, 7 inch reel. 1 2 3 case 1514-01, style 1 sot-89 plastic table 1. typical performance (1) characteristic symbol 900 mhz 2140 mhz 3500 mhz unit small- signal gain (s21) g p 19 15.8 13.4 db input return loss (s11) irl -18 -20 -17 db output return loss (s22) orl -18 -12 -16 db power output @1db compression p1db 18.5 19 18 dbm third order output intercept point ip3 34 32 31 dbm 1. v cc = 5 vdc, t c = 25 c, 50 ohm system table 2. maximum ratings rating symbol value unit supply v oltage (2) v cc 7 v supply current (2) i cc 300 ma rf input power p in 10 dbm storage temperature range t stg - 65 to +150 c junction t emperature (3) t j 150 c 2. continuous voltage and current applied to device. 3. for reliable operation, the junction temperature should not exceed 150 c. table 3. thermal characteristics (v cc = 5 vdc, i cc = 70 ma, t c = 25 c) characteristic symbol value (4) unit thermal resistance, junction to case r jc 85 c/w 4. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www .freescale.com/rf . select documentation/application notes - an1955. document number: MMG3012NT1 rev. 1, 8/2005 freescale semiconductor technical data ? freescale semiconductor, inc., 2005. all rights reserved.
2 rf device data freescale semiconductor MMG3012NT1 table 4. electrical characteristics (v cc = 5 vdc, 900 mhz, t c = 25 c, 50 ohm system, in freescale application circuit) characteristic symbol min typ max unit small- signal gain (s21) g p 17.5 19 ? db input return loss (s11) irl ? -18 ? db output return loss (s22) orl ? -18 ? db power output @ 1db compression p1db ? 18.5 ? dbm third order output intercept point ip3 ? 34 ? dbm noise figure nf ? 3.8 ? db supply current (1) i cc 58 70 82 ma supply voltage (1) v cc ? 5 ? v 1. for reliable operation, the junction temperature should not exceed 150 c.
MMG3012NT1 3 rf device data freescale semiconductor table 5. functional pin description pin number pin function 1 rf in 2 ground 3 rf out /dc supply table 6. esd protection characteristics test methodology class human body model (per jesd 22-a114) 1a (minimum) machine model (per eia/jesd 22-a115) a (minimum) charge device model (per jesd 22-c101) iv (minimum) table 7. moisture sensitivity level test methodology rating package peak t emperature unit per jesd 22-a113, ipc/jedec j-std-020 1 260 c figure 1. functional diagram 3 2 1 2
4 rf device data freescale semiconductor MMG3012NT1 50 ohm typical characteristics 10 25 0 t c = 85 c f, frequency (ghz) figure 2. small -signal gain (s21) versus frequency 20 15 1234 g p , small?signal gain (db) 25 c -40 c 4 ?40 0 0 s22 f, frequency (ghz) figure 3. input/output return loss versus frequency v cc = 5 vdc i cc = 70 ma s11 ?10 ?20 ?30 123 s11, s22 (db) 20 7 21 10 p out , output power (dbm) figure 4. small -signal gain versus output power v cc = 5 vdc i cc = 70 ma 19 17 15 13 11 12 14 9 3.5 3 2.5 2 1.5 1 0.5 13 20 19 18 16 14 v cc = 5 vdc i cc = 70 ma f, frequency (ghz) figure 5. p1db versus frequency p1db, 1 db compression point (dbm) 17 15 5.4 0 100 4 v cc , collector voltage (v) figure 6. collector current versus collector voltage 80 60 20 4.2 5 5.2 i cc , collector current (ma) 40 4.4 4.6 4.8 4 21 36 0 f, frequency (ghz) figure 7. third order output intercept point versus frequency 33 30 27 24 123 v cc = 5 vdc i cc = 70 ma 1 mhz tone spacing ip3, third order output intercept point (dbm) 18 16 g p , small?signal gain (db) v cc = 5 vdc 900 mhz 2140 mhz 1960 mhz 2600 mhz 3500 mhz
MMG3012NT1 5 rf device data freescale semiconductor 50 ohm typical characteristics 21 36 4.9 v cc , collector voltage (v) figure 8. third order output intercept point versus collector voltage 33 30 27 24 ip3, third order output intercept point (dbm) 4.95 5 5.1 5.05 f = 900 mhz 1 mhz tone spacing 100 ?40 ?20 0 20 40 60 80 28 35 t, temperature ( c) figure 9. third order output intercept point versus case temperature 33 32 31 30 ip3, third order output intercept point (dbm) 29 figure 10. third order intermodulation versus output power p out , output power (dbm) imd, third order intermodulation distortion (dbc) 036 9 12 ?80 ?30 ?50 ?60 ?70 v cc = 5 vdc i cc = 70 ma f = 900 mhz 1 mhz tone spacing ?40 150 10 3 10 5 120 figure 11. mttf versus junction temperature 10 4 125 130 135 140 145 t j , junction temperature ( c) note: the mttf is calculated with v cc = 5 vdc, i cc = 70 ma mttf (years) 4 0 8 0 f, frequency (ghz) figure 12. noise figure versus frequency v cc = 5 vdc i cc = 70 ma 6 4 2 123 nf, noise figure (db) ?70 ?20 2 p out , output power (dbm) figure 13. single - carrier w - cdma adjacent channel power ratio versus output power ?30 ?40 ?50 ?60 12 10 8 4 acpr, adjacent channel power ratio (db) 14 16 34 6 v cc = 5 vdc f = 900 mhz 1 mhz tone spacing v cc = 5 vdc i cc = 70 ma f = 2140 mhz single?carrier w?cdma, 3.84 mhz channel bandwidth par = 8.5 db @ 0.01% probability (ccdf) 15
6 rf device data freescale semiconductor MMG3012NT1 50 ohm application circuit: 40-300 mhz figure 14. 50 ohm test circuit schematic rf output rf input v supply c3 c4 z1 z2 c1 z5 c2 r1 l1 v cc z4 z3 dut figure 15. s21, s11 and s22 versus frequency ?40 30 0 f, frequency (mhz) v cc = 5 vdc i cc = 70 ma s22 100 300 400 500 20 10 0 ?10 ?20 ?30 figure 16. 50 ohm test circuit component layout c1 l1 c2 r1 c4 c3 z1, z5 0.347 x 0.058 microstrip z2 0.575 x 0.058 microstrip z3 0.172 x 0.058 microstrip z4 0.403 x 0.058 microstrip pcb getek grade ml200c, 0.031 , r = 4.1 s21, s11, s22 (db) s21 s11 200 mmg30xx rev 2 table 8. 50 ohm test circuit component designations and values part description part number manufacturer c1, c2, c3 0.01 f chip capacitors 0603a103jat2a avx c4 1000 pf chip capacitor 0603a102jat2a avx l1 470 nh chip inductor bk2125hm471 taiyo yuden r1 0 chip resistor erj3gey0r00v panasonic
MMG3012NT1 7 rf device data freescale semiconductor 50 ohm application circuit: 300-3600 mhz figure 17. 50 ohm test circuit schematic rf output rf input v supply c3 c4 z1 z2 c1 z5 c2 r1 l1 v cc z4 z3 dut figure 18. s21, s11 and s22 versus frequency ?30 30 f, frequency (mhz) v cc = 5 vdc i cc = 70 ma s22 800 20 10 0 ?10 ?20 figure 19. 50 ohm test circuit component layout c1 l1 c2 r1 c4 c3 z1, z5 0.347 x 0.058 microstrip z2 0.575 x 0.058 microstrip z3 0.172 x 0.058 microstrip z4 0.403 x 0.058 microstrip pcb getek grade ml200c, 0.031 , r = 4.1 s21, s11, s22 (db) s21 s11 1300 300 1800 2300 2800 3300 3800 mmg30xx rev 2 table 9. 50 ohm test circuit component designations and values part description part number manufacturer c1, c2 150 pf chip capacitors 06035a151jat2a avx c3 0.01 f chip capacitor 0603a103jat2a avx c4 1000 pf chip capacitor 0603a102jat2a avx l1 56 nh chip inductor hk160856nj-t taiyo yuden r1 0 chip resistor erj3gey0r00v panasonic
8 rf device data freescale semiconductor MMG3012NT1 50 ohm typical characteristics table 10. class a common emitter s -parameters at v cc = 5 vdc, i cc = 70 ma, t c = 25 c f s 11 s 21 s 12 s 22 f ghz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 0.1 0.09174 174.872 10.24140 174.57 0.07096 0.256 0.02426 -90.895 0.15 0.09324 173.141 10.19244 171.29 0.07214 -0.171 0.03097 -92.768 0.2 0.09550 172.602 10.14549 168.278 0.07255 -0.477 0.03654 -94.818 0.25 0.09721 171.41 10.09679 165.627 0.07316 -0.245 0.04935 -96.31 0.3 0.09703 170.357 10.03727 162.828 0.07333 -0.227 0.06092 -98.961 0.35 0.09452 169.626 9.99063 159.887 0.07362 -0.511 0.06932 -101.516 0.4 0.09430 168.366 9.92113 157.15 0.07387 -0.509 0.08063 -104.01 0.45 0.09343 167.117 9.84672 154.424 0.07402 -0.582 0.09043 -106.263 0.5 0.09237 166.034 9.77362 151.64 0.07435 -0.77 0.09911 -108.791 0.55 0.09271 164.864 9.68901 148.973 0.07457 -0.953 0.10788 -111.052 0.6 0.09245 163.824 9.60244 146.3 0.07487 -0.984 0.11655 -113.69 0.65 0.09228 162.689 9.51098 143.642 0.07531 -1.158 0.12425 -116.435 0.7 0.09283 161.228 9.41347 141.059 0.07577 -1.362 0.13246 -119.102 0.75 0.09352 159.955 9.31713 138.481 0.07608 -1.566 0.13942 -121.839 0.8 0.09460 158.511 9.21226 135.934 0.07652 -1.748 0.14612 -124.764 0.85 0.09591 157.224 9.10650 133.403 0.07698 -1.988 0.15280 -127.579 0.9 0.09731 155.828 9.00381 130.913 0.07747 -2.17 0.15946 -130.497 0.95 0.09918 154.356 8.89589 128.468 0.07786 -2.552 0.16560 -133.648 1 0.10165 153.21 8.79066 126.065 0.07831 -2.748 0.17180 -136.717 1.05 0.10456 151.519 8.67809 123.674 0.07892 -3.106 0.17724 -139.644 1.1 0.10530 150.349 8.55853 121.296 0.07939 -3.413 0.18362 -142.827 1.15 0.10595 149.493 8.43942 118.934 0.07997 -3.734 0.18945 -146.154 1.2 0.10816 148.216 8.32401 116.631 0.08032 -4.033 0.19501 -149.409 1.25 0.11046 147.031 8.21004 114.349 0.08086 -4.47 0.20058 -152.438 1.3 0.11249 145.868 8.10074 112.14 0.08142 -4.792 0.20635 -155.584 1.35 0.11403 144.558 7.98739 109.93 0.08202 -5.279 0.21190 -158.664 1.4 0.11488 143.211 7.87293 107.781 0.08247 -5.657 0.21733 -161.631 1.45 0.11602 142.244 7.75891 105.625 0.08302 -6.021 0.22271 -164.745 1.5 0.11686 136.948 7.66911 103.599 0.08384 -6.437 0.23416 -166.394 1.55 0.11834 134.929 7.55873 101.565 0.08447 -6.947 0.23853 -169.432 1.6 0.12187 132.851 7.45808 99.538 0.08501 -7.329 0.24236 -172.577 1.65 0.12645 130.925 7.35252 97.533 0.08565 -7.818 0.24526 -175.475 1.7 0.13047 129.243 7.26057 95.548 0.08616 -8.268 0.24807 -178.453 1.75 0.13472 127.648 7.16564 93.586 0.08673 -8.83 0.25113 178.712 1.8 0.13990 126.06 7.06852 91.625 0.08733 -9.205 0.25379 175.901 1.85 0.14563 124.504 6.96617 89.685 0.08792 -9.856 0.25623 173.194 1.9 0.15160 122.941 6.86978 87.806 0.08860 -10.316 0.25716 170.619 1.95 0.15702 121.556 6.77908 85.927 0.08917 -10.882 0.25848 168.384 2 0.16308 120.247 6.68747 84.024 0.08980 -11.465 0.25937 166.234 2.05 0.16757 118.779 6.60108 82.171 0.09037 -12.048 0.26021 164.169 2.1 0.17315 117.547 6.51391 80.255 0.09093 -12.637 0.26130 162.354 2.15 0.17857 116.463 6.42737 78.424 0.09154 -13.316 0.26314 160.699 2.2 0.18449 115.174 6.33611 76.56 0.09210 -13.944 0.26471 159.323 2.25 0.18892 113.697 6.24887 74.732 0.09280 -14.673 0.26627 157.768 2.3 0.19385 112.219 6.16340 72.929 0.09326 -15.366 0.26829 156.541 2.35 0.19754 110.678 6.07930 71.134 0.09383 -16.084 0.27135 155.373
MMG3012NT1 9 rf device data freescale semiconductor table 10. class a common emitter s -parameters at v cc = 5 vdc, i cc = 70 ma, t c = 25 c (continued) f s 11 s 21 s 12 s 22 f ghz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 2.4 0.20084 109.125 5.99646 69.327 0.09424 -16.717 0.27492 154.124 2.45 0.20423 107.523 5.91022 67.546 0.09462 -17.459 0.27881 153.075 2.5 0.20717 105.937 5.82783 65.858 0.09514 -18.149 0.28300 151.824 2.55 0.20983 104.482 5.75180 64.078 0.09561 -18.867 0.28750 150.28 2.6 0.21214 102.92 5.67379 62.378 0.09610 -19.566 0.29276 148.947 2.65 0.21446 101.252 5.59418 60.667 0.09647 -20.335 0.29839 147.403 2.7 0.21638 99.767 5.51853 58.949 0.09688 -21.012 0.30389 145.776 2.75 0.21837 98.143 5.44472 57.276 0.09737 -21.79 0.30941 143.933 2.8 0.22001 96.523 5.37675 55.629 0.09779 -22.573 0.31537 142.001 2.85 0.22117 95.017 5.30584 53.932 0.09840 -23.199 0.32118 140.215 2.9 0.22351 93.331 5.24121 52.348 0.09877 -24.027 0.32764 138.273 2.95 0.22552 91.634 5.17536 50.712 0.09912 -24.843 0.33369 136.168 3 0.22752 90.219 5.11494 49.089 0.09981 -25.546 0.34034 134.188 3.05 0.23097 88.535 5.05825 47.462 0.10036 -26.365 0.34528 132.091 3.1 0.23369 87.054 4.99713 45.82 0.10085 -27.171 0.35126 129.624 3.15 0.23656 85.789 4.94222 44.188 0.10141 -27.968 0.35690 127.421 3.2 0.23989 84.265 4.88930 42.551 0.10188 -28.842 0.36188 125.127 3.25 0.24360 82.93 4.83457 40.954 0.10239 -29.629 0.36735 122.986 3.3 0.24688 81.534 4.78423 39.327 0.10292 -30.452 0.37180 120.634 3.35 0.25052 80.161 4.73023 37.654 0.10350 -31.434 0.37649 118.449 3.4 0.25455 78.818 4.68010 36.023 0.10402 -32.349 0.38152 116.317 3.45 0.25901 77.562 4.63102 34.476 0.10446 -33.239 0.38553 114.07 3.5 0.26341 76.264 4.58330 32.823 0.10504 -34.166 0.39006 112.169 3.55 0.26813 74.959 4.53327 31.168 0.10524 -35.066 0.39457 110.035 3.6 0.27237 73.713 4.48601 29.586 0.10576 -36.008 0.39878 107.887
10 rf device data freescale semiconductor MMG3012NT1 1.7 5.33 3.48 0.58 1.27 0.86 3.86 0.64 7.62 2.49 2.54 1.27 0.305 diameter figure 20. recommended mounting configuration notes: 1. thermal and rf grounding considerations should be used in pcb layout design. 2. depending on pcb design rules, as many vias as possible should be placed on the landing pattern. 3. if vias cannot be placed on the landing pattern, then as many vias as possible should be placed as close to the landing pattern as possible for optimal thermal and rf performance. 4. recommended via pattern shown has 0.381 x 0.762 mm pitch. recommended solder stencil
MMG3012NT1 11 rf device data freescale semiconductor package dimensions 2x 4 typ e.p. 2x r0.20 seating plane 4x c 0.10 c 1.50 1.50 0.46 0.40 1.70 1.40 2x 4 typ 1.35 1.25 0.65 0.55 1.65 1.55 case 1514-01 issue c 3 0.15 m a cb 3 4 a 4.70 4.40 0.60 0.40 b 2.70 2.40 1.30 0.70 4 5 0.48 0.38 0.58 0.48 12 3 0.48 0.38 4.50 3.70 2x 2x r0.15 typ 1.87 1.79 0.15 m a cb 0.15 m a cb 0.20 m cb bottom view style 1: pin 1. rf input 2. ground 3. rf output notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. all dimensions are in millimeters. 3. dimension does not include mold flash, protrusions or gate burrs. mold flash, protrusions or gate burrs shall not exceed 0.5mm per end. dimension does not include interlead flash or protrusion. interlead flash or protrusion shall not exceed 0.5mm per side. 4. dimensions are determined at the outmost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. 5. terminal numbers are shown for reference only. sot -89 plastic
12 rf device data freescale semiconductor MMG3012NT1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incid ental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2005. all rights reserved. how to reach us: home page: www.freescale.com e-mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1- 800- 521- 6274 or +1- 480- 768- 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1- 8- 1, shimo- meguro, meguro- ku, tokyo 153 -0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1- 800- 441- 2447 or 303- 675- 2140 fax: 303-675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: MMG3012NT1 rev. 1, 8/2005

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